Infineon IPLU250N04S4-1R7: High-Performance 40V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPLU250N04S4-1R7 stands out as a premier solution, engineered to meet the rigorous demands of modern applications such as synchronous rectification in switched-mode power supplies (SMPS), motor drives, and high-frequency DC-DC converters.

This Power MOSFET is part of Infineon's esteemed OptiMOS™ 40V family, renowned for its exceptional balance of low on-state resistance and high switching performance. The device boasts an ultra-low maximum RDS(on) of just 0.25 mΩ at 10 V. This remarkably low resistance is a key contributor to minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation, allowing for more compact designs with less cooling overhead.

A critical feature of the IPLU250N04S4-1R7 is its optimized for 1.7V gate drive voltage. This makes it exceptionally suitable for applications where driving the MOSFET from low-voltage logic controllers (like modern MCUs or DSPs) is required, simplifying gate drive circuitry and enhancing overall system efficiency. Furthermore, the component is housed in an Infineon’s proprietary SuperSO8 package (PG-TSON-8), which offers superior thermal characteristics and a very low parasitic inductance. This advanced packaging is instrumental in achieving excellent power density and reliability, especially in space-constrained environments.

The combination of low gate charge (Qg) and low effective output capacitance (Coss(eff)) ensures minimal switching losses, enabling designers to push their systems to higher switching frequencies. This not only allows for the use of smaller passive components like inductors and capacitors but also leads to significant reductions in the overall size and weight of the power supply unit.

ICGOOODFIND: The Infineon IPLU250N04S4-1R7 is a top-tier 40V OptiMOS MOSFET that sets a high standard for performance. Its unparalleled blend of ultra-low RDS(on), 1.7V gate drive optimization, and superior thermal packaging makes it an indispensable component for engineers striving to achieve peak efficiency, high power density, and robust reliability in their advanced power conversion systems.

Keywords: OptiMOS, Low RDS(on), Synchronous Rectification, SuperSO8 Package, High Efficiency.