Infineon IPD135N03LG: A 40V Power MOSFET Redefining Efficiency in the SuperSO8 Package

The relentless pursuit of higher power density and efficiency in modern electronics demands components that deliver exceptional performance within minimal space. Addressing this challenge head-on, the Infineon IPD135N03LG stands out as a premier 40V Single N-Channel HEXFET Power MOSFET, engineered to provide a superior blend of low losses and robust thermal performance in the compact SuperSO8 (SSO8) package.

At the heart of this MOSFET's performance is its remarkably low on-state resistance (R DS(on)) of just 1.35 mΩ (max. at V GS = 10 V). This exceptionally low resistance is the key to minimizing conduction losses, which directly translates to higher efficiency, reduced heat generation, and improved overall system reliability. Whether deployed in synchronous rectification stages of switch-mode power supplies (SMPS), motor control circuits, or high-current DC-DC converters, this characteristic ensures that more power is delivered to the load and less is wasted as heat.

The choice of the SuperSO8 package is a critical factor in its application success. This package features an exposed top-side metal pad that enables excellent thermal connectivity to the PCB. By efficiently transferring heat to the board's copper planes, it acts as a heatsink, allowing the device to handle high drain currents (I D up to 135A) and significant power dissipation without a bulky attached heatsink. This makes it an ideal solution for space-constrained applications where board real estate is at a premium, such as in computing servers, telecommunications infrastructure, and advanced automotive systems.

Furthermore, the IPD135N03LG is built on Infineon's proven HEXFET technology, which ensures high switching speed and ruggedness. The device boasts a low gate charge (Q G typ. 82 nC), facilitating fast switching transitions and reducing driving losses in high-frequency operation. This is paramount for increasing the switching frequency of power supplies, which in turn allows for the use of smaller passive components like inductors and capacitors.

ICGOOODFIND: The Infineon IPD135N03LG is a benchmark component for power design engineers. Its industry-leading combination of ultra-low R DS(on), superior thermal performance from the SuperSO8 package, and high current handling capability makes it an indispensable choice for creating more efficient, compact, and powerful next-generation electronics.

Keywords: Low RDS(on), SuperSO8 Package, Power Efficiency, HEXFET Technology, Synchronous Rectification